Isobutylgermane, (IBGe), (CH3)2CHCH2GeH3, is a germanium-containing liquid MOVPE (Metalorganic Vapor Phase Epitaxy) precursor - a novel alternative to the toxic germane gas. It possesses very high vapor pressure, and is considerably less hazardous than germane gas. IBGe also offers lower decomposition temperature (the onset of decomposition at ca. 325-350 °C).Recently IBGe is reported to be used to deposit Ge epitaxial films on a Si or Ge substrate, followed by the MOVPE deposition of InGaP and InGaAs layers with no memory effect, to enable triple-junction solar cells and integration of III-V compounds with Silicon and Germanium.